admin

To effectively protect the radio-frequency (RF) circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance. In this paper, an SCR device assisted with an inductor is proposed to improve the … 閱讀全文… 關於 ESD protection design for 60-GHz LNA with inductor-triggered SCR in 65-nm CMOS process

A new 2 × VDD-tolerant power-rail electrostatic discharge (ESD) clamp circuit realized with only thin gate oxide 1-V (1 × VDD) devices and a silicon-controlled rectifier (SCR) as the main ESD clamp device has been proposed and verified in a 65-nm CMOS process. This new design has a low standby leakage current by reducing the voltage difference across the gate oxide of the … 閱讀全文… 關於 New design of 2 × VDD-tolerant power-rail ESD clamp circuit for mixed-voltage IO buffers in 65-nm CMOS technology

A new on-chip 4-bit transient-to-digital converter for system-level electrostatic discharge (ESD) protection design is proposed. The proposed converter is designed to detect ESD-induced transient disturbances and transfer different ESD voltages into digital codes under system-level ESD tests. The experimental results in a 0.13-μm CMOS integrated circuit with 1.8-V devices have … 閱讀全文… 關於 New 4-bit transient-to-digital converter for system-level ESD protection in display panels

A stimulus driver circuit for micro-stimulator used in implantable device was presented in this paper. For epileptic seizure control, the target of the driver was to output 30-μA stimulus currents when the electrode impedance varied within 20 and 200 kΩ. The driver, which consisted of output stage, control block, and adaptor, has been integrated in a single chip. The averaged … 閱讀全文… 關於 Stimulus driver for epilepsy seizure suppression with adaptive loading impedance

A 250 MHz analog baseband chain for Ultra-Wideband was implemented in a 1.2 V0.13 um CMOS process. The chip has an active area of 0.8 mm square. In the analog baseband, PGAs and filters are carried out by current-mode amplifiers to achieve wide bandwidth and wide dynamic range of gain, as well as low noise and high linearity. Besides, a current-mode Sallen–Key low-pass filter … 閱讀全文… 關於 A 250 MHz 14 dB-NF 73 dB-Gain 82 dB-DR Analog Baseband Chain With Digital-Assisted DC-Offset Calibration for Ultra-Wideband