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陽明交通大學307實驗室

Mixed-Signal, Radio-Frequency, and Beyond

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  • About
    • 天下雜誌報導
    • 今周刊報導
    • Data Converter ICs
    • Power Management ICs
    • ESD Protection
    • Radio-Frequency VLSI
  • Faculty
    • 吳重雨(退休)教授
    • 吳介琮(退休)教授
    • 柯明道教授
    • 陳巍仁教授
    • 郭建男教授
    • 胡樹一教授
    • 陳柏宏教授
    • 林群祐教授
    • 王仲益教授
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研究成果

Investigation on Unexpected Latchup Path between HV-LDMOS and LV-CMOS in a 0.25-μm 60-V/5-V BCD Technology

2018-01-17 by admin

The latchup path which may potentially exist at the interface between high-voltage (HV) and low-voltage (LV) circuits in a HV bipolar-CMOS-DMOS (BCD) technology is investigated in this work. Owing to the multiple well structures used to realize the HV device in the BCD process, the expected latchup path in the test structure was hardly triggered. However, a parasitic silicon … 閱讀全文… 關於 Investigation on Unexpected Latchup Path between HV-LDMOS and LV-CMOS in a 0.25-μm 60-V/5-V BCD Technology

System-Level ESD Protection for Automotive Electronics by Co-Design of TVS and CAN Transceiver Chip

2018-01-17 by admin

A co-packaged methodology using Transient Voltage Suppressor (TVS) chips and a controller area network (CAN) bus transceiver to ensure IEC 61000-4-2 system-level ESD protection is proposed in this work. The design methodology is verified in a high-voltage silicon-on-insulator (SOI) process for CAN transceiver chip and an 0.8-mm bipolar process for TVS chips. The I-V curves of … 閱讀全文… 關於 System-Level ESD Protection for Automotive Electronics by Co-Design of TVS and CAN Transceiver Chip

On-Chip ESD Protection Device for High-Speed I/O Applications in CMOS Technology

2018-01-17 by admin

The diode operated under forward-biased condition has been widely used as an on-chip electrostatic discharge (ESD) protection device for high-speed circuits to sustain high ESD robustness, but the parasitic capacitance of diode may bring a negative impact to the circuits operating at higher speed. The ESD protection design with low parasitic capacitance has been strongly … 閱讀全文… 關於 On-Chip ESD Protection Device for High-Speed I/O Applications in CMOS Technology

A Digitally Dynamic Power Supply Technique for 16-Channel 12V-Tolerant Stimulator Realized in a 0.18-μm 1.8-V/3.3-V Low-Voltage CMOS Process

2018-01-17 by admin

A 16-channel 12V-tolerant stimulator has been designed and successfully verified in a 0.18-μm 1.8-V/3.3-V CMOS process. It can be fully integrated with the microcontroller or the biomedical signal processor into an SoC chip fabricated in a low-voltage CMOS technology. The experimental results have shown that the proposed new digitally dynamic power supply technique for … 閱讀全文… 關於 A Digitally Dynamic Power Supply Technique for 16-Channel 12V-Tolerant Stimulator Realized in a 0.18-μm 1.8-V/3.3-V Low-Voltage CMOS Process

A Fully Integrated Closed-Loop Neuromodulation SoC with Wireless Power and Bidirectional Data Telemetry for Real-Time Human Epileptic Seizure Control

2018-01-17 by admin

This paper presents a 16-channel closed-loop neuromodulation SoC for human seizure control. The SoC includes a 16-ch signal acquisition unit, a bio-signal processor, a 16-ch adaptive stimulator, and wireless telemetry. The signal acquisition unit amplifies and digitizes the sensed electrocorticogram (ECoG) signals. The digitized data are then processed by bio-signal processor … 閱讀全文… 關於 A Fully Integrated Closed-Loop Neuromodulation SoC with Wireless Power and Bidirectional Data Telemetry for Real-Time Human Epileptic Seizure Control

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