Integrated circuits (ICs) are susceptible to breakage due to electrostatic discharge (ESD), making ESD protection circuits necessary for ICs. In some applications, internal circuits may adopt an all N-type transistor design. In such cases, the ESD protection circuit should only use N-type transistors to reduce the number of process masks required. This work proposes both a … 閱讀全文… 關於 All-NMOS Power-Rail ESD Clamp Circuit with Compact Area and Low Leakage
Characterization of ESD-induced electromigration on CMOS metallization in on-chip ESD protection circuit
Electrostatic Discharge (ESD) and electromigration are critical issues that significantly impact the reliability of integrated circuits (ICs). While both of these phenomena have been studied independently, the combination of the two, ESD-induced electromigration, has received less attention, potentially compromising IC reliability. This work analyzes various types of metal with … 閱讀全文… 關於 Characterization of ESD-induced electromigration on CMOS metallization in on-chip ESD protection circuit